Characterization and Depth Analysis of Organic Thin Film Transistor
Keywords:Organic Thin Film Transistor (OTFT), Bottom Gate Bottom Contact (BGBC), Bottom Gate Top Contact (BGTC)
Organic semiconductor technology on polymer and flexible substrate is creating a base for researchers and
industrial communities due to their ability to find application as a low cost, flexible and large area electronic
device. In this paper an overview of Organic thin film transistor (OTFT) has been done. Different structures of
OTFT have been explained on behalf of placement of source, gate and drain electrodes. The working principle
of OTFT is enlightened with the help of energy band diagrams. As it is a three terminal device with source,
drain and gate electrodes the operation of OTFT is similar to that of a MOSFET with difference in the process
of channel formation which is briefly described in this paper. Application of OTFT is their most attractive
feature and there are various possible ways of using it which were not possible with the silicon devices.
Simulation of Bottom Gate Bottom Contact (BGBC) and Bottom Gate top Contact (BGTC) OTFT structures are
carried out using 2-D Simulator ATLAS by Silvaco. The results show a major difference in performance of both
the structures, thus highlighting the fact that structure of OTFT plays a very important role.
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